Ion Sources for High Energy Ion Implantation at BNL

Application/instrumentation:

Ion Sources for High Energy Ion Implantation

Developed at:

Brookhaven National Laboratory, New York; High Current Electronic Institute, Tomsk, Russia; Institute for Theoretical and Experimental Physics, Moscow, Russia

Developed in:

2003-2006

Result of NP research:

Alternative pre-injector for RHIC

Application currently being supported by:

DOE IPP

Impact/benefit to spin-off field:

High charge-state ion sources that facilitate multi-MeV ion implantation of semiconductors with direct current acceleration instead of the currently used linear accelerators. Benefits are reduction in electric power usage and reduction in implanter size.

Ion source photo and phosphorous ion current spectrum for MeV Implanters. Order of magnitude improvement in currents of P2+, P3+, and P4+ over state-of-the-art was obtained.

Spectrum and photo of an ion source generating High Fraction Boron Ion Source for Ion Implantation. 70% boron fraction represents a factor of 3.5

Highlights

View all Highlights

Researchers have long thought pure niobium superconducting radiofrequency cavities were best for particle accelerators. Researchers are now using a toolkit to learn how to add impurities to the cavities to make them smoother—and more efficient.

Smoother Surfaces Make for Better Particle Accelerators

An enhanced topographic analysis toolkit for forecasting and improving particle accelerator performance is helping scientists build better accelerators.

Smoother Surfaces Make for Better Particle Accelerators

An enhanced topographic analysis toolkit for forecasting and improving particle accelerator performance is helping scientists build better accelerators.

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