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Germanium semiconductor (grey) with dilute silicon (Si) and tin (Sn) atoms (red and blue). Si and Sn do not spread out randomly. They often group together in Si-Ge-Sn sets, showing a short-range order that was previously predicted but not confirmed.

Uncovering Hidden Atomic Patterns in Semiconductors

Advanced microscopy reveals motifs of trace atoms in semiconductors, paving the way for new microelectronics designed atom by atom.

Left: X-ray tomography (XRT) image of a miniature sandstone sample. Right: A diffraction microscopy reconstruction of each grain’s compressive stress magnitude and orientation (portrayed as lines with length proportional to magnitude) during deformation.

Revealing Rock Stresses and Fractures in 3D

The evolution of a sandstone’s texture, structure, and stress was measured during deformation for the first time.

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