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U.S. Department of Energy Office of Science

University Research

University California Santa Barbara

Atomic Imperfections

Using cutting-edge first-principles calculations, researchers at the UC Santa Barbara have demonstrated the mechanism by which transition metal impurities — iron in particular — can act as nonradiative recombination centers in nitride semiconductors.

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Michigan University

Atomistic Calculations Predict that Boron Incorporation Increases the Efficiency of LEDs

Using predictive atomistic calculations and high-performance supercomputers at the NERSC computing facility, researchers Logan Williams and Emmanouil Kioupakis at the University of Michigan found that incorporating the element boron into the widely used InGaN (indium-gallium nitride) material can keep electrons from becoming too crowded in LEDs, making the material more efficient at producing light.

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