Idaho
IDAHO
Company:
American Semiconductor, Inc.
3100 S. Vista Avenue, Suite 230
Boise, ID 83705-7368
Title:
Next-Generation Detector and Imager Development
Summary:
This proposal will utilize the demonstrated detector diodes along with conversion of the readout design to MIGFET transistors and build the MAMBO in Flexfet SOI-CMOS to eliminate the threshold shift plaguing current SOI based sensors. This project's success will result in the demonstration of an advanced X-ray Imager that has detector diodes formed in the handle silicon and a 12-bit counter array for high dynamic range X-ray or electron microscope imaging in the SOI layer with immunity to application of large backside biases.
