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American Semiconductor, Inc.
3100 S. Vista Avenue, Suite 230
Boise, ID 83705-7368
Next-Generation Detector and Imager Development
This proposal will utilize the demonstrated detector diodes along with conversion of the readout design to MIGFET transistors and build the MAMBO in Flexfet SOI-CMOS to eliminate the threshold shift plaguing current SOI based sensors. This project's success will result in the demonstration of an advanced X-ray Imager that has detector diodes formed in the handle silicon and a 12-bit counter array for high dynamic range X-ray or electron microscope imaging in the SOI layer with immunity to application of large backside biases.